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Questions:

1. Explain the depletion layer in p-n junction diode with suitable diagram.
2. Discuss the Fermi level in intrinsic and extrinsic semiconductors.
3. Explain DC and AC load lines for transistor.
4. Write a short note on emitter follower circuit.
5. Derive the Barkhausen criterion for sustained oscillations.
6. What is Field Effect Transistor (FET)? Why is it called unipolar transistor?
7. What is Boolean Algebra? Write down its commutative, associative and distributive properties.
8. Convert decimal (4097)10 to binary equivalent.
9. Convert octal number (24) to binary equivalent.
10. Convert hexadecimal number (49)16 to decimal equivalent.
11. Calculate the barrier capacitance of p-n junction diode made of Germanium having area 1 um and thickness 100 nm. The dielectric constant of Germanium is 16.
12. Explain the Kronig-Penny model. Derive the equation for the energy of an electron in one-dimensional periodic potential.
13. Explain the formation of barrier field across the p-n junction diode. Derive the equation for the width of depletion layer and height of potential barrier.
14. Draw the circuit of R-C coupled CE amplifier and explain its frequency response curve at different frequency ranges. Why does the gain decrease in low and high frequency ranges?
15. Find out the expression for input impedance, output impedance, current gain, voltage gain and power gain in terms of h-parameters for CE amplifier.
16. What are Power Amplifiers? Write down the difference between Voltage and Power Amplifiers. Explain the working of class A power amplifier with suitable circuit diagram and output characteristic curve.
17. Explain the working of tuned collector oscillator with circuit diagram and derive the equation for its frequency of oscillation.
18. What is MOSFET? Explain the construction and working of depletion type and enhancement type of MOSFET with their respective characteristic curves.
19. Simplify the given expressions using Boolean Algebra method.