Substitute any two phrases with one word: (a) One who is not able to pay his debts, (b) One who believes in fate, (c) One who works for the welfare of women.
Write a note on J.B. Priestly's essay making writing simple.
Prepare a technical proposal on your favorite subject.
Define time dilation, and derive the formula for time dilation.
Explain the meaning of reactive power and power factor in AC (steady state) circuits.
What are Newton's rings? How are they formed? Prove that in reflected light, diameters of bright rings are proportional to the square root of odd natural numbers.
Describe the importance of Software Engineering. What steps should be taken under the process of developing a software system?
Discuss Porter's value chain model in detail.
Elaborate on the following terms: Class diagram, Activity diagram, Component diagram, Deployment diagram, Sequence diagram. Draw a class diagram and activity diagram for a telephone call.
Discuss the purpose of data link layer in OSI reference model.
Explain OSI reference model and also tell us that which OSI layers handle the following: Dividing the transmitted bit stream into frames, Determining which route through the subnet to use.
Differentiate between Data Flow Diagram and E-R Diagram.
How is feasibility study crucial in overall development of a new system? Discuss various feasibility studies to be performed in a successful system development.
Describe the Spiral model for software development mentioning its pros and cons.
Prove that the set {0, 1, 2, 3, 4} is a finite abelian group of order 5 under addition modulo 5.
Solve the recurrence relation: a_(n+1) - a_n = 3 2^n, n > 0, a_0 = 3.
State the pigeonhole principle and prove that if any 51 integers are chosen from the set {1, 2, ..., 100}, then there exist two integers such that one is a multiple of the other.
What is the Ripple factor of Rectifier? Find the Ripple factor of half-wave rectifier.
A transistor has an Ic of 100 mA and IB of 0.5 mA. What is the value of adc?
Find the concentration of holes and electrons in an N-type silicon at 300 K if the conductivity is 0.1 (ohm-cm)-1. Given that n; at 300 K for silicon = 1.5 x 101cm3, Le at 300 K for silicon = 1300 cm2/V-S.